Tag Archives: vertical nand

Toshiba Corp. and SanDisk Corp. have formally introduced their first vertically stacked triple-level-cell (TLC) NAND flash memory IC [integrated circuit] with 256Gb capacity. The new 3D BiCS [bit cost scalable] NAND flash memory will be mass produced next year. Toshiba’s new 256Gb (32GB) 48-layer BiCS flash device features 3-bit-per-cell TLC (triple-level cell) …

SanDisk Corp. and Toshiba Corp. are on-track to start volume shipments of products based on their BiCS [bit cost scalable] 3D NAND flash memory in 2016. Recently the two companies began to purchase equipment needed to manufacture vertically stacked NAND chips and will initiate pilot production later in 2015. Moreover, …

Toshiba Corp. and SanDisk Corp. this week said that they have finished development of vertically-stacked 3D NAND memory devices. The BiCS [bit cost scalable] NAND flash memory from the two companies will be mass-produced in 2016 and will enable new solid-state storage devices with enhanced reliability and performance. Toshiba’s three-dimensional …

At present solid-state drives with extreme capacities are very expensive and even the best of them cannot match high-capacity hard disk drives for nearline storage applications. However, thanks to the evolution of NAND flash memory in general, and 3D vertical NAND (3D V-NAND) in particular, the situation may change soon …