Tag Archives: gate-all-around FET

Taiwan Semiconductor Manufacturing Co. this week confirmed that it has a team of engineers working on a manufacturing process that will succeed 10nm fabrication technology towards the end of the decade. While the company did not reveal details about its sub-10nm process, it said that it considers various options for …

Kinam Kim, the president of Samsung Electronics’ semiconductor business, presented his view on the development of chip manufacturing technologies at the International Solid-State Circuits Conference 2015 this week. Samsung is already developing its next-generation 10nm FinFET fabrication process, but in order to continue scaling down structures of chips, new materials …