Tag Archives: FD-SOI

GlobalFoundries on Monday introduced a family of fully-depleted silicon-on-insulator (FD-SOI) manufacturing technologies designed for customers seeking high performance and low design costs. The new fabrication processes promise to deliver performance of next-generation technologies with FinFET transistors, but at costs comparable to those of existing processes. GlobalFoundries calls its new family …

GlobalFoundries has revealed additional details regarding its 22nm fully-depleted silicon-on-insulator (FD-SOI) fabrication technology. The manufacturing process will be ready for tape-outs in early 2016 and will be used for mass production of chips by late next year. While the tech has a number of advantages, the process is designed primarily …

Modern FinFET process technologies help to reduce power consumption of modern chips while increasing their clock-rate potential. Unfortunately, it is extremely expensive to design FinFET chips, which is why many chip developers cannot afford creation of new solutions. In a bid to help such companies to release new chips, GlobalFoundries …

While non-standard fabrication processes are sometimes challenging and make it harder to re-use intellectual property across different product lineups, they are just what the doctor ordered when one needs to achieve certain goals. According to GlobalFoundries, the No. 2 contract maker of chips, many customized process technologies are gaining importance …

Samsung Electronics and STMicroelectronics this week inked a licensing agreement on 28nm fully depleted silicon-on-insulator (FD-SOI) technology. The deal grants Samsung rights to produce chips on FD-SOI wafers using a 28nm process technology developed by STMicroelectronics. The FD-SOI wafers will allow chip designers to get better performance or to cut-down …