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Samsung has announced its 3rd generation HBM2E “Flashbolt” memory this week. The latest generation of High Bandwidth Memory 2 is designed to maximise computing performance for HPC systems and assist manufacturers to advance their supercomputer designs. Samsung’s new “Flashbolt” HBM2E will provide double the capacity of the previous generation 8GB …
Read More »Samsung unveils its 3rd generation HBM2E ‘Flashbolt’ memory
