Tag Archives: 22nm FD-SOI

GlobalFoundries on Monday introduced a family of fully-depleted silicon-on-insulator (FD-SOI) manufacturing technologies designed for customers seeking high performance and low design costs. The new fabrication processes promise to deliver performance of next-generation technologies with FinFET transistors, but at costs comparable to those of existing processes. GlobalFoundries calls its new family …

GlobalFoundries has revealed additional details regarding its 22nm fully-depleted silicon-on-insulator (FD-SOI) fabrication technology. The manufacturing process will be ready for tape-outs in early 2016 and will be used for mass production of chips by late next year. While the tech has a number of advantages, the process is designed primarily …

Modern FinFET process technologies help to reduce power consumption of modern chips while increasing their clock-rate potential. Unfortunately, it is extremely expensive to design FinFET chips, which is why many chip developers cannot afford creation of new solutions. In a bid to help such companies to release new chips, GlobalFoundries …