Samsung Electronics have issued a statement detailing their plans to build a new flash memory chip plant in China.
They said they have applied with the Korea government to build a new semiconductor production line overseas. As they wait for approval to come through they are holding further negotiations with the Chinese government, planning to build a new NAND flash wafer plant for the production of 20nm products.
They hope to start construction of the China plant in 2012 and possibly to create products in 2013.
Digitimes add “Samsung in September announced a new memory semiconductor fabrication facility, Line-16, at its Nano City Complex in Hwaseong had commenced operations. The facility houses production lines for DRAM, NAND and next-generation memory products.
Samsung also remarked previously it started making 20nm-class NAND flash in September, and would move forward to 10nm process technology in 2012.”
Kitguru says: The approval should go through shortly.