Samsung Green DDR3 8GB 1600mhz 30nm Memory review

Allan 'Zardon' Campbell May 25, 2012 Featured Announcement, Memory

Rating: 9.5.

We have looked at quite a few memory kits already this year but today we have something very special in our labs. The latest Samsung Eco ‘Green' DDR3 built on the 30nm manufacturing process. This memory is true low profile and only demands 1.35 volts. The potential therefore for achieving a good overclock should be strong.

If we were being completely honest, reviewing a 1,600mhz memory kit isn't a very exciting process. There are literally hundreds of different 1,600mhz kits from manufacturers such as Patriot, Kingston and G.Skill.

We would class 1,600mhz memory now as the entry level speed for an enthusiast grade system build. With 2,133mhz memory now widely available at competitive pricing, there seems no reason to save a few pounds for a slower rated memory.

Or is there?

Features:-

– Model Name: MV-3V4G3D/US
– Main Board: INTEL/AMD
– System: DESKTOP/SFF
– System Type: DDR3
– M/B Chipset: INTEL P67, Z68, Z77, X79 & AMD Chipsets
– CAS Latency: 11-11-11-28 1N
– Capacity: 8GB (4GBx2)
– Speed: DDR3-1600 (PC3-12800)
– Test Voltage: 1.25-1.55V
– Registered/Unbuffered: Unbuffered
– Error Checking: Non-ECC
– Type: 240-pin DIMM Low Profile
– Warranty: Lifetime

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Starfield: Shattered Space launches to middling reviews

Just over a year ago, Bethesda Games Studios released Starfield – a ‘big space game’ which had been ruminating in Todd Howard’s mind for over 25 years. Despite its grand ambitions, the title saw a mixed reaction from fans, though positive critic reviews. Unfortunately, it seems as though Starfield’s first expansion ‘Shattered Space’ has failed to impress players on both sides.