We test the memory kit’s performance at the 2666MHz (100MHz BCLK) overclocked settings. The stock speed results are graphed to show the performance gains (if any) that are obtained from overclocking.
A simple 266MHz DRAM frequency increase adds around 8% to the memory bandwidth numbers. 4.6ns (around 7%) is shaved off the memory latency thanks to the faster clock rate.
Albeit a minute tenth of a frame (around 0.1%) increase in Bioshock Infinite performance, 2666MHz with CL15 timings running off the 100MHz BCLK seems to be a sweet-spot for all-round memory performance. Games which utilise system memory to a greater extent may show heavier performance increases from the higher clock rate.
Users with memory-intensive workloads can benefit from the free performance boosts that require little more than a few voltage increases.
This kit uses Samsung ICs as evidenced by the “3500” in the serial numbers. Hynix would be “3400” and Micron “3300” for G.Skill DDR4. Probably the initial batches were all Hynix but these days it seems for all the RAM vendors that Hynix ICs are being reserved for high end kits with specs that only Hynix can pass (3000MHz 15-15-15, 3200MHz 16-16-16 etc).
Thanks for that information, Calvin. Where did you find the info?
Luke
Long thread over at XtremeSystems forums: http://www.xtremesystems.org/forums/showthread.php?283666-Figuring-out-G-Skill-s-SNs
Thanks for that! I have updated the text in the article and thanked you for the information.
Luke